Atomically thin quantum light-emitting diodes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27667022.
- Also identified by DOI 10.1038/ncomms12978 and PMC identifier 5052681.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.