Single Electron Gating of Topological Insulators.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27677534.
- Also identified by DOI 10.1002/adma.201602413.
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Abstract
The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit.