Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films.
basic_science · Level V
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- Record sourced from PubMed, PMID 27723127.
- Also identified by DOI 10.1002/adma.201603968.
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Abstract
A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment - commonly used in classic semiconductor materials - is applied to the PbTiO<sub>3</sub> system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.