Giant piezoelectric voltage coefficient in grain-oriented modified PbTiO<sub>3</sub> material.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27725634.
- Also identified by DOI 10.1038/ncomms13089 and PMC identifier 5062610.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
A rapid surge in the research on piezoelectric sensors is occurring with the arrival of the Internet of Things. Single-phase oxide piezoelectric materials with giant piezoelectric voltage coefficient (g, induced voltage under applied stress) and high Curie temperature (T<sub>c</sub>) are crucial towards providing desired performance for sensing, especially under harsh environmental conditions. Here, we report a grain-oriented (with 95% <001> texture) modified PbTiO<sub>3</sub> ceramic that has a high T<sub>c</sub> (364 °C) and an extremely large g<sub>33</sub> (115 × 10<sup>-3</sup> Vm N<sup>-1</sup>) in comparison with other known single-phase oxide materials. Our results reveal that self-polarization due to grain orientation along the spontaneous polarization direction plays an important role in achieving large piezoelectric response in a domain motion-confined material. The phase field simulations confirm that the large piezoelectric voltage coefficient g<sub>33</sub> originates from maximized piezoelectric strain coefficient d<sub>33</sub> and minimized dielectric permittivity ɛ<sub>33</sub> in [001]-textured PbTiO<sub>3</sub> ceramics where domain wall motions are absent.