Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.
basic_science · Level V
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- Record sourced from PubMed, PMID 27748526.
- Also identified by DOI 10.1002/adma.201603293.
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Abstract
Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer. The graphene-based devices show high reliability and satisfying performance.