Photon-Gated Spin Transistor.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27797123.
- Also identified by DOI 10.1002/adma.201604052.
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Abstract
A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon-induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation.