Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27859773.
- Also identified by DOI 10.1002/adma.201603858.
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Abstract
A printed vertical field-effect transistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer-electrolyte-based gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm<sup>-2</sup> .