Giant Rashba Splitting in Pb<sub>1-</sub><sub>x</sub> Sn<sub>x</sub> Te (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk.
basic_science · Level V
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- Record sourced from PubMed, PMID 27859857.
- Also identified by DOI 10.1002/adma.201604185.
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Abstract
The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb<sub>1-</sub><sub>x</sub> Sn<sub>x</sub> Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.