Metal-Semiconductor Phase-Transition in WSe<sub>2(1-</sub><sub>x</sub><sub>)</sub> Te<sub>2</sub><sub>x</sub> Monolayer.
basic_science · Level V
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- Record sourced from PubMed, PMID 27874223.
- Also identified by DOI 10.1002/adma.201603991.
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Abstract
A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe<sub>2</sub> (WSe<sub>2(1-x)</sub> Te<sub>2x</sub> , where x = 0%-100%). The optical bandgaps of the WSe<sub>2(1-x)</sub> Te<sub>2x</sub> monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.