50-Fold EQE Improvement up to 6.27% of Solution-Processed All-Inorganic Perovskite CsPbBr<sub>3</sub> QLEDs via Surface Ligand Density Control.
basic_science · Level V
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- Record sourced from PubMed, PMID 27882606.
- Also identified by DOI 10.1002/adma.201603885.
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Abstract
Solution-processed CsPbBr<sub>3</sub> quantum-dot light-emitting diodes with a 50-fold external quantum efficiency improvement (up to 6.27%) are achieved through balancing surface passivation and carrier injection via ligand density control (treating with hexane/ethyl acetate mixed solvent), which induces the coexistence of high levels of ink stability, photoluminescence quantum yields, thin-film uniformity, and carrier-injection efficiency.