Epitaxially Self-Assembled Alkane Layers for Graphene Electronics.
basic_science · Level V
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- Record sourced from PubMed, PMID 27905154.
- Also identified by DOI 10.1002/adma.201603925.
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Abstract
The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO<sub>2</sub> surface toward the well-ordered and rigid alkane self-assembled layers.