High-Performance, Air-Stable Field-Effect Transistors Based on Heteroatom-Substituted Naphthalenediimide-Benzothiadiazole Copolymers Exhibiting Ultrahigh Electron Mobility up to 8.5 cm V<sup>-1</sup> s<sup>-1</sup>.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27922201.
- Also identified by DOI 10.1002/adma.201602410.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Rational heteroatom engineering is applied to develop high-performance electron-transporting naphthalenediimide copolymers. Top-gate field-effect transistors fabricated from selenophene-containing polymers achieve an ultrahigh electron mobility of 8.5 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and excellent air-stability. The results demonstrate that the incorporation of selenophene heterocycles into the polymers can improve the film-forming ability, intermolecular interaction, and carrier transport significantly.