Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS<sub>2</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 27966226.
- Also identified by DOI 10.1002/adma.201603550.
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Abstract
A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large-size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS<sub>2</sub> film up to 1 cm<sup>2</sup> . The novel strategy is also verified for the synthesis of WSe<sub>2</sub> and MoS<sub>2</sub> uniform films, suggesting universality for TMD film fabrication.