Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.
Where this comes from
- Record sourced from PubMed, PMID 27992513.
- Also identified by DOI 10.1371/journal.pone.0168515 and PMC identifier 5167399.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.
Medical subject headings
- Computer Storage Devices
- Membranes, Artificial
- Zinc Oxide