Side Gate Tunable Josephson Junctions at the LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface.
basic_science · Level V
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- Record sourced from PubMed, PMID 28071920.
- Also identified by DOI 10.1021/acs.nanolett.6b03820 and PMC identifier 5343548.
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Abstract
Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.