Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum.
basic_science · Level V
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- Record sourced from PubMed, PMID 28072541.
- Also identified by DOI 10.1021/acs.nanolett.6b04964.
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Abstract
We demonstrate the transfer of the superconducting properties of NbTi, a large-gap high-critical-field superconductor, into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflections reveal near-unity transparency with an induced gap Δ* = 0.50 meV and a critical temperature of 7.8 K. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent to the superconductor of Δ* = 0.43 meV with substructure characteristic of both Al and NbTi.