Low-Frequency Electronic Noise in Quasi-1D TaSe<sub>3</sub> van der Waals Nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 28073263.
- Also identified by DOI 10.1021/acs.nanolett.6b04334.
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Abstract
We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe<sub>3</sub> capped with quasi-2D h-BN layers. Semimetallic TaSe<sub>3</sub> is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe<sub>3</sub> nanowires have lower levels of the normalized noise spectral density, S<sub>I</sub>/I<sup>2</sup>, compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f<sup>2</sup> type as temperature increases to ∼400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-1D TaSe<sub>3</sub> nanowires is approximately E<sub>P</sub> ≈ 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is E<sub>A</sub> = 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.