Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS<sub>2</sub>-BaTiO<sub>3</sub>-SrRuO<sub>3</sub> Tunnel Junctions.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28094991.
- Also identified by DOI 10.1021/acs.nanolett.6b04247.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO<sub>3</sub> ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS<sub>2</sub>) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS<sub>2</sub> results in a giant tunneling electroresistance effect in the hybrid MoS<sub>2</sub>-BaTiO<sub>3</sub>-SrRuO<sub>3</sub> ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 10<sup>4</sup>, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS<sub>2</sub> electrode in response to ferroelectric switching, which alters the barrier at the MoS<sub>2</sub>-BaTiO<sub>3</sub> interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO<sub>3</sub> adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.