Initialization-Free Multilevel States Driven by Spin-Orbit Torque Switching.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28097688.
- Also identified by DOI 10.1002/adma.201601575.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin-orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization-free multilevel memory advances the spin-orbit-torque magnetic random access memory to higher storage density for practical applications.