High Speed Epitaxial Perovskite Memory on Flexible Substrates.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28112840.
- Also identified by DOI 10.1002/adma.201605699.
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Abstract
Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.