Electrical Performance of a Molecular Organic Semiconductor under Thermal Stress.
basic_science · Level V
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- Record sourced from PubMed, PMID 28128863.
- Also identified by DOI 10.1002/adma.201605511.
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Abstract
The high temperature performance oforganic field-effect transistorsbased on a molecular organic semiconductor with intermediate dimensions, namely X2, is evaluated. Hole mobility is stable, even at 200-250 °C. Changes in device characteristics at high temperature are reversible across multiple cycles of high temperature operation. Measurements at high temperature exhibit larger hysteresis, while at low temperature one observes the emergence of ambipolar transport.