Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.
basic_science · Level V
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- Record sourced from PubMed, PMID 28135102.
- Also identified by DOI 10.1021/acs.nanolett.6b04675.
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Abstract
Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.