Growth and Optical Properties of Direct Band Gap Ge/Ge<sub>0.87</sub>Sn<sub>0.13</sub> Core/Shell Nanowire Arrays.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28165747.
- Also identified by DOI 10.1021/acs.nanolett.6b04627.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge<sub>0.87</sub>Sn<sub>0.13</sub> shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.