Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe<sub>2</sub> Schottky Barrier Transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28191930.
- Also identified by DOI 10.1021/acsnano.6b07360.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Through the careful study of ionic liquid gated WSe<sub>2</sub> Schottky barrier field-effect transistors as a function of flake thickness-referred to in the following as body thickness, t<sub>body</sub>-critical insights into the electrical properties of WSe<sub>2</sub> are gained. One finding is that the inverse subthreshold slope shows a clear dependence on body thickness, i.e., an approximate square root dependent increase with t<sub>body</sub>, that provides evidence that injection into the WSe<sub>2</sub> channel is mediated by thermally assisted tunneling through the gate-controlled Schottky barriers at the source and drain. By employing our Schottky barrier model, a detailed experimental plot of the WSe<sub>2</sub> bandgap as a function of body thickness is obtained. We will discuss why the analysis employed here is critically dependent on the use of the above-mentioned ionic liquid gate and how device characteristics are analyzed in detail.