Designing Strained Interface Heterostructures for Memristive Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 28195367.
- Also identified by DOI 10.1002/adma.201605049.
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Abstract
Ionic heterostructures are used as a strain-modulated memristive device based on the model system Gd<sub>0.1</sub> Ce<sub>0.9</sub> O<sub>2-</sub><sub>δ</sub> /Er<sub>2</sub> O<sub>3</sub> to set and tune the property of "memristance." The modulation of interfacial strain and the interface count is used to engineer the R<sub>off</sub> /R<sub>on</sub> ratio and the persistence of the system. A model describing the variation of mixed ionic-electronic mobilities and defect concentrations is presented.