In-Plane 2H-1T' MoTe<sub>2</sub> Homojunctions Synthesized by Flux-Controlled Phase Engineering.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28221704.
- Also identified by DOI 10.1002/adma.201605461.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The fabrication of in-plane 2H-1T' MoTe<sub>2</sub> homojunctions by the flux-controlled, phase-engineering of few-layer MoTe<sub>2</sub> from Mo nanoislands is reported. The phase of few-layer MoTe<sub>2</sub> is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe<sub>2</sub> is formed with high Te flux, while few-layer 1T' MoTe<sub>2</sub> is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T' MoTe<sub>2</sub> homojunctions are synthesized. As-synthesized MoTe<sub>2</sub> is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T' MoTe<sub>2</sub> homojunctions have abrupt interfaces between 2H and 1T' MoTe<sub>2</sub> domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal-semiconductor junctions in MoTe<sub>2</sub> in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal-semiconductor junctions for next-generation electronic and optoelectronic devices.