Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 28231017.
- Also identified by DOI 10.1021/acs.nanolett.6b04891 and PMC identifier 5391496.
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Abstract
The ability of core-shell nanowires to overcome existing limitations of heterostructures is one of the key ingredients for the design of next generation devices. This requires a detailed understanding of the mechanism for strain relaxation in these systems in order to eliminate strain-induced defect formation and thus to boost important electronic properties such as carrier mobility. Here we demonstrate how the hole mobility of [110]-oriented Ge-Si core-shell nanowires can be substantially enhanced thanks to the realization of large band offset and coherent strain in the system, reaching values as high as 4200 cm<sup>2</sup>/(Vs) at 4 K and 1600 cm<sup>2</sup>/(Vs) at room temperature for high hole densities of 10<sup>19</sup> cm<sup>-3</sup>. We present a direct correlation of (i) mobility, (ii) crystal direction, (iii) diameter, and (iv) coherent strain, all of which are extracted in our work for individual nanowires. Our results imply [110]-oriented Ge-Si core-shell nanowires as a promising candidate for future electronic and quantum transport devices.