Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28233778.
- Also identified by DOI 10.1038/ncomms14560 and PMC identifier 5333113.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm<sup>2</sup>. Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m<sup>-2</sup> that can already satisfy the requirements for lighting sources and displays.