Modulation-Doped In<sub>2</sub> O<sub>3</sub> /ZnO Heterojunction Transistors Processed from Solution.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28295712.
- Also identified by DOI 10.1002/adma.201605837.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
This paper reports the controlled growth of atomically sharp In<sub>2</sub> O<sub>3</sub> /ZnO and In<sub>2</sub> O<sub>3</sub> /Li-doped ZnO (In<sub>2</sub> O<sub>3</sub> /Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In<sub>2</sub> O<sub>3</sub> /ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In<sub>2</sub> O<sub>3</sub> over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In<sub>2</sub> O<sub>3</sub> /Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In<sub>2</sub> O<sub>3</sub> /Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.