High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.
basic_science · Level V
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- Record sourced from PubMed, PMID 28370566.
- Also identified by DOI 10.1002/adma.201602969.
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Abstract
Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe<sub>2</sub> ), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe<sub>2</sub> show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe<sub>2</sub> to exhibit electron-dominated transport with high mobility (µ<sub>e (max)</sub> = 216 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> ) and on/off ratio up to 10<sup>3</sup> . Hole-dominated-transport PdSe<sub>2</sub> can be obtained by molecular doping using F<sub>4</sub> -TCNQ. This pioneer work on PdSe<sub>2</sub> will spark interests in the less explored regime of noble-TMDCs.