Selective control of electron and hole tunneling in 2D assembly.
basic_science · Level V
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- Record sourced from PubMed, PMID 28439554.
- Also identified by DOI 10.1126/sciadv.1602726 and PMC identifier 5397133.
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Abstract
Recent discoveries in the field of two-dimensional (2D) materials have led to the demonstration of exotic devices. Although they have new potential applications in electronics, thermally activated transport over a metal/semiconductor barrier sets physical subthermionic limitations. The challenge of realizing an innovative transistor geometry that exploits this concern remains. A new class of 2D assembly (namely, "carristor") with a configuration similar to the metal-insulator-semiconductor structure is introduced in this work. Superior functionalities, such as a current rectification ratio of up to 400,000 and a switching ratio of higher than 10<sup>6</sup> at room temperature, are realized by quantum-mechanical tunneling of majority and minority carriers across the barrier. These carristors have a potential application as the fundamental building block of low-power consumption electronics.