Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi<sub>0.95</sub> Co<sub>0.05</sub> O<sub>3</sub> Film.
basic_science · Level V
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- Record sourced from PubMed, PMID 28449391.
- Also identified by DOI 10.1002/adma.201700425.
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Abstract
Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi<sub>0.95</sub> Co<sub>0.05</sub> O<sub>3</sub> (BTCO) film with a SrRuO<sub>3</sub> (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500-800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25-180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.