Local Enhancement of Polarization at PbTiO<sub>3</sub>/BiFeO<sub>3</sub> Interfaces Mediated by Charge Transfer.
basic_science · Level V
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- Record sourced from PubMed, PMID 28541701.
- Also identified by DOI 10.1021/acs.nanolett.7b00788.
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Abstract
Ferroelectrics hold promise for sensors, transducers, and telecommunications. With the demand of electronic devices scaling down, they take the form of nanoscale films. However, the polarizations in ultrathin ferroelectric films are usually reduced dramatically due to the depolarization field caused by incomplete charge screening at interfaces, hampering the integrations of ferroelectrics into electric devices. Here, we design and fabricate a ferroelectric/multiferroic PbTiO<sub>3</sub>/BiFeO<sub>3</sub> system, which exhibits discontinuities in both chemical valence and ferroelectric polarization across the interface. Aberration-corrected scanning transmission electron microscopic study reveals an 8% elongation of out-of-plane lattice spacing associated with 104%, 107%, and 39% increments of δ<sub>Ti</sub>, δ<sub>O1</sub>, and δ<sub>O2</sub> in the PbTiO<sub>3</sub> layer near the head-to-tail polarized interface, suggesting an over ∼70% enhancement of polarization compared with that of bulk PbTiO<sub>3</sub>. Besides that in PbTiO<sub>3</sub>, polarization in the BiFeO<sub>3</sub> is also remarkably enhanced. Electron energy loss spectrum and X-ray photoelectron spectroscopy investigations demonstrate the oxygen vacancy accumulation as well as the transfer of Fe<sup>3+</sup> to Fe<sup>2+</sup> at the interface. On the basis of the polar catastrophe model, FeO<sub>2</sub>/PbO interface is determined. First-principles calculation manifests that the oxygen vacancy at the interface plays a predominate role in inducing the local polarization enhancement. We propose a charge transfer mechanism that leads to the remarkable polarization increment at the PbTiO<sub>3</sub>/BiFeO<sub>3</sub> interface. This study may facilitate the development of nanoscale ferroelectric devices by tailing the coupling of charge and lattice in oxide heteroepitaxy.