Three-dimensional crossbar arrays of self-rectifying Si/SiO<sub>2</sub>/Si memristors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28580928.
- Also identified by DOI 10.1038/ncomms15666 and PMC identifier 5465358.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO<sub>2</sub>/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (10<sup>5</sup> rectifying ratio, 10<sup>4</sup> ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.