UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO<sub>2</sub> Detection.
basic_science · Level V
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- Record sourced from PubMed, PMID 28614602.
- Also identified by DOI 10.1002/adma.201701706.
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Abstract
A new type of nitrogen dioxide (NO<sub>2</sub> ) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO<sub>2</sub> sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO<sub>2</sub> ] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO<sub>2</sub> ] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO<sub>2</sub> and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.