Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS<sub>2</sub> van der Waals Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 28686030.
- Also identified by DOI 10.1021/acs.nanolett.7b02186.
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Abstract
We have realized encapsulated trilayer MoS<sub>2</sub> devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000 cm<sup>2</sup>/(V s) at a density of 3 × 10<sup>12</sup> cm<sup>-2</sup> at a temperature of 1.9 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 0.9 T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.