Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28695200.
- Also identified by DOI 10.1126/sciadv.1700589 and PMC identifier 5493419.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus-based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature-specific detectivity higher than 4.9 × 10<sup>9</sup> Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/<i>f</i> noise in photonic devices.