An All-Solution-Based Hybrid CMOS-Like Quantum Dot/Carbon Nanotube Inverter.
basic_science · Level V
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- Record sourced from PubMed, PMID 28714202.
- Also identified by DOI 10.1002/adma.201701764.
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Abstract
The development of low-cost, flexible electronic devices is subordinated to the advancement in solution-based and low-temperature-processable semiconducting materials, such as colloidal quantum dots (QDs) and single-walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high-performance complementary metal-oxide-semiconductor (CMOS)-like inverters is demonstrated. The n-type field effect transistors (FETs) based on I<sup>-</sup> capped PbS QDs (V<sub>th</sub> = 0.2 V, on/off = 10<sup>5</sup> , S<sub>S-th</sub> = 114 mV dec<sup>-1</sup> , µ<sub>e</sub> = 0.22 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> ) and the p-type FETs with tailored parameters based on low-density random network of SWCNTs (V<sub>th</sub> = -0.2 V, on/off > 10<sup>5</sup> , S<sub>S-th</sub> = 63 mV dec<sup>-1</sup> , µ<sub>h</sub> = 0.04 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> ) are integrated on the same substrate in order to obtain high-performance hybrid inverters. The inverters operate in the sub-1 V range (0.9 V) and have high gain (76 V/V), large maximum-equal-criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV).