Spin Hall Effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 28715194.
- Also identified by DOI 10.1021/acs.nanolett.7b02364.
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Abstract
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. The graphene/WS<sub>2</sub> system is found to maximize spin proximity effects compared to graphene on MoS<sub>2</sub>, WSe<sub>2</sub>, or MoSe<sub>2</sub> with a crucial role played by disorder, given the disappearance of SHE signals in the presence of strong intervalley scattering. Notably, we found that stronger WAL effects are concomitant with weaker charge-to-spin conversion efficiency. For further experimental studies of graphene/TMDC heterostructures, our findings provide guidelines for reaching the upper limit of spin current formation and for fully harvesting the potential of two-dimensional materials for spintronic applications.