Graphene-Contacted Ultrashort Channel Monolayer MoS<sub>2</sub> Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 28752671.
- Also identified by DOI 10.1002/adma.201702522.
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Abstract
2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS<sub>2</sub> . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS<sub>2</sub> FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.