On-Chip Andreev Devices: Hard Superconducting Gap and Quantum Transport in Ballistic Nb-In<sub>0.75</sub> Ga<sub>0.25</sub> As-Quantum-Well-Nb Josephson Junctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 28804969.
- Also identified by DOI 10.1002/adma.201701836.
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Abstract
A superconducting hard gap in hybrid superconductor-semiconductor devices has been found to be necessary to access topological superconductivity that hosts Majorana modes (non-Abelian excitation). This requires the formation of homogeneous and barrier-free interfaces between the superconductor and semiconductor. Here, a new platform is reported for topological superconductivity based on hybrid Nb-In<sub>0.75</sub> Ga<sub>0.25</sub> As-quantum-well-Nb that results in hard superconducting gap detection in symmetric, planar, and ballistic Josephson junctions. It is shown that with careful etching, sputtered Nb films can make high-quality and transparent contacts to the In<sub>0.75</sub> Ga<sub>0.25</sub> As quantum well, and the differential resistance and critical current measurements of these devices are discussed as a function of temperature and magnetic field. It is demonstrated that proximity-induced superconductivity in the In<sub>0.75</sub> Ga<sub>0.25</sub> As-quantum-well 2D electron gas results in the detection of a hard gap in four out of seven junctions on a chip with critical current values of up to 0.2 µA and transmission probabilities of >0.96. The results, together with the large g-factor and Rashba spin-orbit coupling in In<sub>0.75</sub> Ga<sub>0.25</sub> As quantum wells, which indeed can be tuned by the indium composition, suggest that the Nb-In<sub>0.75</sub> Ga<sub>0.25</sub> As-Nb system can be an excellent candidate to achieve topological phase and to realize hybrid topological superconducting devices.