Enhanced Electronic Properties of SnO<sub>2</sub> via Electron Transfer from Graphene Quantum Dots for Efficient Perovskite Solar Cells.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 28858471.
- Also identified by DOI 10.1021/acsnano.7b04070.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Tin dioxide (SnO<sub>2</sub>) has been demonstrated as an effective electron-transporting layer (ETL) for attaining high-performance perovskite solar cells (PSCs). However, the numerous trap states in low-temperature solution processed SnO<sub>2</sub> will reduce the PSCs performance and result in serious hysteresis. Here, we report a strategy to improve the electronic properties in SnO<sub>2</sub> through a facile treatment of the films with adding a small amount of graphene quantum dots (GQDs). We demonstrate that the photogenerated electrons in GQDs can transfer to the conduction band of SnO<sub>2</sub>. The transferred electrons from the GQDs will effectively fill the electron traps as well as improve the conductivity of SnO<sub>2</sub>, which is beneficial for improving the electron extraction efficiency and reducing the recombination at the ETLs/perovskite interface. The device fabricated with SnO<sub>2</sub>:GQDs could reach an average power conversion efficiency (PCE) of 19.2 ± 1.0% and a highest steady-state PCE of 20.23% with very little hysteresis. Our study provides an effective way to enhance the performance of perovskite solar cells through improving the electronic properties of SnO<sub>2</sub>.