Robust and Selective Switching of an Fe<sup>III</sup> Spin-Crossover Compound on Cu<sub>2</sub>N/Cu(100) with Memristance Behavior.
basic_science · Level V
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- Record sourced from PubMed, PMID 29023129.
- Also identified by DOI 10.1021/acs.nanolett.7b02481.
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Abstract
The switching between two spin states makes spin-crossover molecules on surfaces very attractive for potential applications in molecular spintronics. Using scanning tunneling microscopy, the successful deposition of [Fe(pap)<sub>2</sub>]<sup>+</sup> (pap = N-2-pyridylmethylidene-2-hydroxyphenylaminato) molecules on Cu<sub>2</sub>N/Cu(100) surface is evidenced. The deposited Fe<sup>III</sup> spin-crossover compound is controllably switched between three different states, each of them exhibiting a characteristic tunneling conductance. The conductance is therefore employed to readily read the state of the molecules. A comparison of the experimental data with the results of density functional theory calculations reveals that all Fe(pap)<sub>2</sub> molecules are initially in their high-spin state. The two other states are compatible with the low-spin state of the molecule but differ with respect to their coupling to the substrate. As a proof of concept, the reversible and selective nature of the switching is used to build a two-molecule memory.