Chemical Patterning of High-Mobility Semiconducting 2D Bi<sub>2</sub> O<sub>2</sub> Se Crystals for Integrated Optoelectronic Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 29024159.
- Also identified by DOI 10.1002/adma.201704060.
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Abstract
Patterning of high-mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next-generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high-mobility semiconducting Bi<sub>2</sub> O<sub>2</sub> Se crystals using dilute H<sub>2</sub> O<sub>2</sub> and protonic mixture acid as efficient etchants. The 2D Bi<sub>2</sub> O<sub>2</sub> Se crystal after chemical etching maintains a high Hall mobility of over 200 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at room temperature. Centimeter-scale well-ordered arrays of 2D Bi<sub>2</sub> O<sub>2</sub> Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi<sub>2</sub> O<sub>2</sub> Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W<sup>-1</sup> at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits.