Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 29062892.
- Also identified by DOI 10.1126/sciadv.1701661 and PMC identifier 5650486.
- Licence recorded as CC BY-NC.
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Abstract
Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS<sub>2</sub> is investigated as a defect passivation method. A strong negative charge transfer from MoS<sub>2</sub> to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> in back-gated MoS<sub>2</sub> transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS<sub>2</sub>. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.