Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS<sub>2</sub> Continuous Films.
basic_science · Level V
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- Record sourced from PubMed, PMID 29141137.
- Also identified by DOI 10.1021/acsnano.7b03819.
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Abstract
Large scale epitaxial growth and transfer of monolayer MoS<sub>2</sub> has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS<sub>2</sub> films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS<sub>2</sub> films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.