Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO<sub>3</sub> heterostructures.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 29146896.
- Also identified by DOI 10.1038/s41467-017-01581-6 and PMC identifier 5691063.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Exploiting multiferroic BiFeO<sub>3</sub> thin films in spintronic devices requires deterministic and robust control of both internal magnetoelectric coupling in BiFeO<sub>3</sub>, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer. Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable. Here we demonstrate room temperature, deterministic and robust, exchange coupling between monodomain BiFeO<sub>3</sub> films and Co overlayer that is intrinsic (i.e., not dependent on domain walls). Direct coupling between BiFeO<sub>3</sub> antiferromagnetic order and Co magnetization is observed, with ~ 90° in-plane Co moment rotation upon single-step switching that is reproducible for hundreds of cycles. This has important consequences for practical, low power non-volatile magnetoelectric devices utilizing BiFeO<sub>3</sub>.