Large Proximity-Induced Spin Lifetime Anisotropy in Transition-Metal Dichalcogenide/Graphene Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 29172543.
- Also identified by DOI 10.1021/acs.nanolett.7b03460 and PMC identifier 5770138.
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Abstract
Van der Waals heterostructures have become a paradigm for designing new materials and devices in which specific functionalities can be tailored by combining the properties of the individual 2D layers. A single layer of transition-metal dichalcogenide (TMD) is an excellent complement to graphene (Gr) because the high quality of charge and spin transport in Gr is enriched with the large spin-orbit coupling of the TMD via the proximity effect. The controllable spin-valley coupling makes these heterostructures particularly attractive for spintronic and opto-valleytronic applications. In this work, we study spin precession in a monolayer MoSe<sub>2</sub>/Gr heterostructure and observe an unconventional, dramatic modulation of the spin signal, showing 1 order of magnitude longer lifetime of out-of-plane spins compared to that of in-plane spins (τ<sub>⊥</sub> ≈ 40 ps and τ<sub>∥</sub> ≈ 3.5 ps). This demonstration of a large spin lifetime anisotropy in TMD/Gr heterostructures, is a direct evidence of induced spin-valley coupling in Gr and provides an accessible route for manipulation of spin dynamics in Gr, interfaced with TMDs.