Highly Efficient Thin-Film Transistor via Cross-Linking of 1T Edge Functional 2H Molybdenum Disulfides.
basic_science · Level V
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- Record sourced from PubMed, PMID 29182846.
- Also identified by DOI 10.1021/acsnano.7b07776.
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Abstract
Thin-film transistors (TFTs) have received great attention for their use in lightweight, large area, and wearable devices. However, low crystalline materials and inhomogeneous film formation limit the realization of high-quality electrical properties for channels in commercial TFTs, especially for flexible electronics. Here, we report a field-effect TFT fabricated via cross-linking of edge-1T basal-2H MoS<sub>2</sub> sheets that are prepared by edge functional exfoliation of bulk MoS<sub>2</sub> with soft organic exfoliation reagents. For edge functional exfoliation, the electrophilic 4-carboxy-benzenediazonium used as the soft organic reagent attacks the nucleophilic thiolates exposed at the edge of the bulk MoS<sub>2</sub> with the help of an amine catalyst, resulting in 1T edge-functional HOOC-benzene-2H basal MoS<sub>2</sub> nanosheets (e-MoS<sub>2</sub>). The cross-linking via hydrogen bonding of the negatively charged HOOC of the e-MoS<sub>2</sub> sheets with the help of a cationic polymer, polydiallyldimethylammonium chloride, results in a good film formation for a channel of the solution processing TFT. The TFT exhibits an extremely high mobility of 170 cm<sup>2</sup>/(V s) at 1 V (on/off ratio of 10<sup>6</sup>) on SiO<sub>2</sub>/Si substrate and also a high mobility of 36.34 cm<sup>2</sup>/(V s) (on/off ratio of 10<sup>3</sup>) on PDMS/PET substrate.