Single Atomic Layer Ferroelectric on Silicon.
basic_science · Level V
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- Record sourced from PubMed, PMID 29244954.
- Also identified by DOI 10.1021/acs.nanolett.7b03988.
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Abstract
A single atomic layer of ZrO<sub>2</sub> exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO<sub>2</sub> gate stack demonstrate that a reversible polarization of the ZrO<sub>2</sub> interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5-10 nm to exhibit significant hysteretic behavior (Park, et al. Adv. Mater. 2015, 27, 1811).